PIXE analysis of the Mn-doped content in Ga1-xMnxN film grown by LP-MOVPE

Summary Department of Technical Physics, School of Physics, Peking Unive     

小间隙高放大多丝室及其放电机制

对以强猝灭气体工作的小间隙多丝室及其放电机制进行了研究,实验表明,因为工作在饱和模式区,这种室同时具有很高的气体放大和相当快的时间特性.文中探讨了放电机制,雪崩中空间电荷效应以及电离光子的产生和作用是重要的因素,而其中后一因素又受到强猝灭气体的抑制.     

~n中有界域上全纯函数的第Ⅰ型 C-F公式

本文得到Ｃｎ中有界域上全纯函数的一种其积分密度函数含有全纯函数导数的 Ｃａｕｃｈｙ－Ｆａｎｔａｐｐｉ　　公式，称之为第Ⅰ型 Ｃ－Ｆ 公式，利用这个公式，通过适当选择其中的向量函数，可以得到许多区域上全纯函数相应的第Ⅰ型积分表示式．     

Low-threshold, high-efficiency, high-repetition-rate optical parametric generator based on periodically poled LiNbO3

We report a high-repetition-rate optical parametric generator (OPG) with a periodically poled lithium niobate (PPLN) crystal pumped by an acousto-optically Q-switched CW-diode-end-pumped Nd:YVO_4 laser. For the maximum 1064nm pump power of 970mW, the maximum conversion efficiency is 32.9% under the conditions of 250℃, 1064nm pulse repetition rate of 22.6kHz and pulse width of 12ns, and the PPLN OPG threshold in the collinear case is less than 23.7μJ. The output power increases with the increase of the crystal temperature. The 1485－1553nm signal wave and 3383－3754nm idler wave are obtained by changing the temperature and the angle of the PPLN crystal.     

一种高温超导磁悬浮装置

本文介绍一个基于倒挂吸引式(EMS)原理的高温超导磁悬浮试验装置．这个装置由高温超导磁体、单臂梁金属导轨、位置传感器、控制电路等组成．绕制超导磁体线圈所用的是Bi-2223／Ag高温超导线材．超导磁体工作在激磁电流为3．2A时，在5mm的空气间隙中产生0．21T的磁通密度，与单臂梁金属导轨可产生72N的垂直悬浮力．通过引入压控电流源，利用常规的超前一滞后校正实现了该磁悬浮装置的稳定悬浮和鲁棒控制，在负载变化87．5%的情况下仍能实现超导磁悬浮装置的稳定悬浮．该试验装置首次验证了高温超导线圈的可控性问题，为进一步探索高温超导线圈用于磁悬浮轨道交通系统的可行性打下了基础．     

白光干涉条纹变密的原因探讨

讨论了在测定透明介质折射率的过程中彩色条纹变密的现象，并在其基础上分析其成因：一是由于媒质折射率加大；二是由于平形板介质平行度不好造成楔形的倾角变大，最后在实验中验证了理论结果。     

Some sufficient conditions for oscillation of impulsive delay hyperbolic systems with Robin boundary conditions

This paper deals with the oscillation problems of delay hyperbolic systems with impulses. Some sufficient conditions for oscillations of impulsive delay hyperbolic systems with Robin boundary conditions are obtained and the criteria of oscillation of the systems are established.     

Reduction of dislocation density and improvement of optical quality in ZnO layers by MgO-buffer annealing

Optical properties of ZnO thin films with/without MgO-buffer annealing were investigated by low and room temperature photoluminescence measurements. The ZnO films were grown on c-sapphire substrates by plasma-assisted molecular-beam epitaxy employing a thin MgO-buffer layer. Dislocation density of ZnO layer was reduced from 5.3 × 10⁹ to 1.9 × 10⁹ cm⁻² by annealing MgO-buffer prior to the growth of ZnO. The intensity of free exciton emission from the sample with MgO-buffer annealing was almost twice of that from the sample without annealing, while the deep level emission from the sample with MgO-buffer annealing was about 1/3 of that without annealing. The MgO-buffer annealing improves optical quality of overgrown ZnO films.     

Experimental 511 W Composite Nd：YAG Ceramic Laser

We demonstrate a 511 W laser diode pumped composite Nd：YAG ceramic laser. The optical pumping system is consisted of five laser diode stacked arrays arranged in a pentagonal shape around the ceramic rod whose size is φ6.35×144mm. When the pumping power is 1600 W, the cw laser output up to 511 W at 1064nm can be obtained with a linear piano-piano cavity, and the optical-to-optical efficiency is 31.9%. To our knowledge, this is the highest value of laser output by using a newly invented composite Nd：YAG ceramic rod as the gain medium.     

Optical characterization of CdTe/ZnSe fractional monolayer structures grown by atomic layer epitaxy

Luminescence properties of CdTe/ZnSe fractional monolayer grown by atomic layer epitaxy have been investigated. To investigate the origin of the highly efficient luminescence, various optical spectroscopic methods such as, photoluminescence (PL), temporal/spatial resolved PL, temperature dependence PL, and excitation power dependence PL have been used. It is found that structural inhomogeneities affect dominant influence on the line width and line shape of luminescence. The luminescence intensity greatly enhanced by the localization of exciton at the disorder induced localized states.